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Description: PM-DIODE-SIC-SBD-D1P
Category: |
Discrete Semiconductor Products
Diodes
Rectifiers
Diode Arrays |
Product Status: |
Active |
Current - Average Rectified (Io) (per Diode): |
100A |
Operating Temperature - Junction: |
-40°C ~ 175°C |
Voltage - Forward (Vf) (Max) @ If: |
1.8 V @ 100 A |
Package: |
Box |
Series: |
- |
Diode Configuration: |
1 Pair Series Connection |
Supplier Device Package: |
D1P |
Reverse Recovery Time (trr): |
0 ns |
Mfr: |
Microchip Technology |
Technology: |
SiC (Silicon Carbide) Schottky |
Package / Case: |
Module |
Voltage - DC Reverse (Vr) (Max): |
1700 V |
Mounting Type: |
Chassis Mount |
Speed: |
No Recovery Time > 500mA (Io) |
Base Product Number: |
MSCDC100 |
Current - Reverse Leakage @ Vr: |
400 µA @ 1700 V |
Category: |
Discrete Semiconductor Products
Diodes
Rectifiers
Diode Arrays |
Product Status: |
Active |
Current - Average Rectified (Io) (per Diode): |
100A |
Operating Temperature - Junction: |
-40°C ~ 175°C |
Voltage - Forward (Vf) (Max) @ If: |
1.8 V @ 100 A |
Package: |
Box |
Series: |
- |
Diode Configuration: |
1 Pair Series Connection |
Supplier Device Package: |
D1P |
Reverse Recovery Time (trr): |
0 ns |
Mfr: |
Microchip Technology |
Technology: |
SiC (Silicon Carbide) Schottky |
Package / Case: |
Module |
Voltage - DC Reverse (Vr) (Max): |
1700 V |
Mounting Type: |
Chassis Mount |
Speed: |
No Recovery Time > 500mA (Io) |
Base Product Number: |
MSCDC100 |
Current - Reverse Leakage @ Vr: |
400 µA @ 1700 V |
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